Institute of Nano Optoelectronics Research and Technology - INOR USM jobs and careers

About Institute of Nano Optoelectronics Research and Technology - INOR USM

The Institute of Nano Optoelectronics Research and Technology (INOR) has been intensively optimizing the epi-process for III-nitride layers since early 2018. Through the current HICoE program, the effort is continued by focusing on improvements of the material quality of the layers with different material compositions and different device design structures. In particular, this program is divided into five projects: aluminum gallium nitride (AlGaN) UV LEDs, long-wavelength emission Indium gallium nitride/gallium nitride (InGaN/GaN) LEDs, InGaN solar cells, GaN-based nanophotonics devices, AlGaN/GaN high-electron-mobility transistors (HEMTs), and GaN UV detectors.